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Si7898DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
150
R DS(on) ( Ω )
0.085 at V GS = 10 V
0.095 at V GS = 6.0 V
I D (A)
4.8
4.5
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
for Fast Switching
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? PWM Optimized
PowerPAK SO-8
? 100 % R g Tested
APPLICATIONS
6.15 mm
1
S
S
5.15 mm
? DC/DC Power Supply Primary Side Switch
2
3
S
4
G
? Industrial Motor Drives
D
D
8
7
D
D
6
5
D
G
Bottom V ie w
S
Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free)
Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
150
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction) a
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I AS
I S
4.8
3.8
4.1
25
10
3.0
2.4
1.6
A
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5.0
3.2
- 55 to 150
260
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
20
52
2.1
25
65
2.6
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71873
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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